JPS6219049B2 - - Google Patents

Info

Publication number
JPS6219049B2
JPS6219049B2 JP57004035A JP403582A JPS6219049B2 JP S6219049 B2 JPS6219049 B2 JP S6219049B2 JP 57004035 A JP57004035 A JP 57004035A JP 403582 A JP403582 A JP 403582A JP S6219049 B2 JPS6219049 B2 JP S6219049B2
Authority
JP
Japan
Prior art keywords
wafer
width
resist
exposure
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57004035A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58122726A (ja
Inventor
Juzo Shimazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57004035A priority Critical patent/JPS58122726A/ja
Publication of JPS58122726A publication Critical patent/JPS58122726A/ja
Publication of JPS6219049B2 publication Critical patent/JPS6219049B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP57004035A 1982-01-16 1982-01-16 レジスト寸法の精密制御による半導体素子の製造方法 Granted JPS58122726A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57004035A JPS58122726A (ja) 1982-01-16 1982-01-16 レジスト寸法の精密制御による半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57004035A JPS58122726A (ja) 1982-01-16 1982-01-16 レジスト寸法の精密制御による半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58122726A JPS58122726A (ja) 1983-07-21
JPS6219049B2 true JPS6219049B2 (en]) 1987-04-25

Family

ID=11573701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57004035A Granted JPS58122726A (ja) 1982-01-16 1982-01-16 レジスト寸法の精密制御による半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58122726A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01159559U (en]) * 1988-04-23 1989-11-06

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5943550A (en) * 1996-03-29 1999-08-24 Advanced Micro Devices, Inc. Method of processing a semiconductor wafer for controlling drive current

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01159559U (en]) * 1988-04-23 1989-11-06

Also Published As

Publication number Publication date
JPS58122726A (ja) 1983-07-21

Similar Documents

Publication Publication Date Title
JP2919004B2 (ja) パターン形成方法
US4738910A (en) Method of applying a resist
JPS6219049B2 (en])
JP2616091B2 (ja) 半導体装置の製造方法
JPH04282820A (ja) パタン形成方法
US7368229B2 (en) Composite layer method for minimizing PED effect
WO1983003485A1 (en) Electron beam-optical hybrid lithographic resist process
JPH06110214A (ja) レジストパターンの形成方法
CN112255884B (zh) 一种光刻图形的制造方法与制造系统
JPS6347924A (ja) 半導体装置の製造方法
KR0156106B1 (ko) 금속배선 공정에서의 패턴 형성방법
JPH06140297A (ja) レジスト塗布方法
JPH0864494A (ja) レジストパターン形成方法とその装置
JPS631315Y2 (en])
CN116430690A (zh) 光刻显影方法及半导体结构
JPH03261955A (ja) 現像方法
JPS60106132A (ja) パタ−ン形成方法
JPH0141246B2 (en])
JPS61198630A (ja) レジストパタ−ン形成方法
JPH0263049A (ja) マスクパターンを有する基板及びその製造方法
JPH0244138B2 (en])
JPS5852639A (ja) レジストパタ−ン形成方法
JPS60126651A (ja) レジスト現像方法
JPS6074521A (ja) パタ−ン形成方法
JPH05226211A (ja) 露光方法